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December 200 8
FCP20N60 / FCPF20N60
600V N-Channel MOSFET
SuperFET
TM
Features
? 650V @T J = 150°C
? Typ. R DS(on) = 0.15 ?
? Ultra low gate charge (typ. Q g = 75nC)
? Low effective output capacitance (typ. C oss .eff = 165pF)
? 100% avalanche tested
? RoHS C ompliant
Description
SuperFET TM is, Fa i rchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.
D
G
G D S
TO-220
G D S
TO-220F
S
Absolute Maximum Ratings
Symbol
V DSS
Drain-Source Voltage
Parameter
FCP20N60
FCPF20N60
600
Unit
V
I D
Drain Current
- Continuous (T C = 25 ° C)
- Continuous (T C = 100 ° C)
20
12.5
20*
12.5*
A
A
I DM
Drain Current
- Pulsed
(Note 1)
60
60*
A
V GSS
Gate-Source voltage
± 30
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
690
20
20.8
4.5
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 ° C)
- Derate above 25 ° C
208
1.67
39
0.3
W
W/ ° C
T J, T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
° C
° C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FCP20N60
0.6
62.5
FCPF20N60
3.2
62.5
Unit
° C/W
° C/W
?200 8 Fairchild Semiconductor Corporation
FCP20N60 / FCPF20N60 Rev. A 2
1
www.fairchildsemi.com
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